Company will represent new generation of its R&D samples of 850 nm VCSEL and p-i-n photodiode chips with robust operating temperature range from 20 to 95 °C.
The chips are designed for ultra-high speed data transmission via optical fiber networks – at speeds beyond 25 Gbit/s per channel. Company will also promote its molecular beam epitaxy (MBE) services: MBE growth on GaAs and InP substrates for wide range of optoelectronic devices: edge-emitting lasers, VCSELs, photodiodes etc.
World's Leading Event for Advancing Optical Solutions in Telecom, Datacom, Computing will take place in Anaheim Convention Center, Anaheim, CA, USA, 17-21 March 2013 (Technical Conference), 19-21 March 2013 (Exposition).
We welcome you to our booth #2562 at the OFC/NFOEC 2013!